Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

Authors
Gaubas, E Vaitkus, J Simoen, E Claeys, C Vanhellemont, J
Citation
E. Gaubas et al., Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity, MAT SC S PR, 4(1-3), 2001, pp. 125-131
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
125 - 131
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<125:ECCPTF>2.0.ZU;2-E
Abstract
This paper presents a modified excess carrier profiling technique using car rier decay cross-sectional scans of wafers using a narrow excitation fiber guided beam and by using infrared light as well as microwave probes. The th eoretical principles of the technique are based on the analysis of the dept h variation of decay shape and the amplitude. (C) 2001 Elsevier Science Ltd . All rights reserved.