Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime

Authors
Sciacca, E Lombardo, S Patti, D Ghioni, M Zappa, F Rimini, E Cova, S
Citation
E. Sciacca et al., Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime, MAT SC S PR, 4(1-3), 2001, pp. 159-161
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
159 - 161
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<159:SPJBAB>2.0.ZU;2-E
Abstract
In this paper we show that single-photon avalanche detectors (SPADs) may ha ve a strong potential as very sensitive on-wafer tools for Lifetime monitor ing, given their simple fabrication process and their straightforward use i n the measurements. We have fabricated Si SPADs with n(+)-p structures and we show that dark counting has a simple exponential dependence on time, thu s making it possible to extract a single lifetime parameter. (C) 2001 Elsev ier Science Ltd. All rights reserved.