Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy

We have used scanning capacitance microscopy to determine two-dimensional c arrier distributions in 6H-SiC on both epitaxial layers and implanted sampl es. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have be en investigated to obtain an optimised procedure. Implants were performed o n p-type 6H-SiC at a substrate temperature of 500 degreesC with N ions at d ifferent fluences. The defect profiles were determined by Rutherford backsc attering spectrometry. The influence of the implanted damage on the measure ments has been investigated by implanted Si-self ions. (C) 2001 Elsevier Sc ience Ltd. All rights reserved.