Silicon melt density - problems of Archimedean technique

Citation
K. Terashima et K. Kanno, Silicon melt density - problems of Archimedean technique, MAT SC S PR, 4(1-3), 2001, pp. 249-251
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
249 - 251
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<249:SMD-PO>2.0.ZU;2-D
Abstract
Si melt density has been found to have the maximum value around 2.54 g/cm(3 ) at 24 degreesC above the melting point, like H2O. The anomalous variation near the melting point reported by Sasaki et al. [1] has been found to be due to the melt climbing to the bob when just touching the Si melt surface. It is needed to wait more than 2h to get constant values. We used fresh bo bs to measure one point temperature in order to eliminate the bob thickness variations. The density variations are discussed in terms of weight signal variations. Tentative density values are proposed. (C) 2001 Elsevier Scien ce Ltd. All rights reserved.