Citation
A. Yelisseyev et al., Local optical spectroscopy of HPHT synthetic diamonds, as grown at 1500 degrees C, MAT SC S PR, 4(1-3), 2001, pp. 273-276
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001
→ ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
273 - 276
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<273:LOSOHS>2.0.ZU;2-S
Abstract
Spatial distribution of impurity centres was studied using local optical sp
ectroscopy in HPHT synthetic diamonds obtained at 1750 K in the Fe-N-C syst
em. The impurity aggregation rate was found to depend on growth rate for ce
rtain {1 1 1} sector. In sectors grown with higher rate the outer yellow Ib
-type layer about 1 mm thick with dominating nitrogen C-defects and the int
ernal colourless, strongly luminescent area of Ia type, where impurities ar
e aggregated into nitrogen A-defects and a variety of different nickel-nitr
ogen complexes were found. (C) 2001 Elsevier Science Ltd. All rights reserv
ed.