Thermo-photo-voltaic phenomena in an inhomogeneous semiconductor

Authors
Sikorski, S Piotrowski, T Jung, W
Citation
S. Sikorski et al., Thermo-photo-voltaic phenomena in an inhomogeneous semiconductor, MAT SC S PR, 4(1-3), 2001, pp. 285-288
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
285 - 288
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<285:TPIAIS>2.0.ZU;2-Q
Abstract
Photo-voltaic effects are considered for semiconductors in which doping, en ergy gap and temperature are position-dependent. Formula derived for total current density contains four effects: (1) bulk photo-voltaic effect, (2) p hotovoltaic effect resulting from inhomogeneity of mobilities, (3) thermo-p hoto-voltaic effect arising from combined photoconductivity and thermo-elec tric effects, (4) Seebeck thermo-electric effect. Numerical results shown i n figures present relative Values of these effects calculated for Ge-Si sem iconductor material. (C) 2001 Elsevier Science Ltd. All rights reserved.