Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact

Authors
Kaminska, E Piotrowska, A Barcz, A Reginski, K Dluzewski, P Kozlowski, M Dynowska, E
Citation
E. Kaminska et al., Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact, MAT SC S PR, 4(1-3), 2001, pp. 289-291
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
289 - 291
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<289:SOZSTA>2.0.ZU;2-Z
Abstract
Microstructural transformations in p-GaAs/Ni/Zn contact have been studied b y a combined use of XTEM, SIMS and XRD. The results give evidence that the thermally activated contact reaction leads to the formation of an ohmic con tact to p-GaAs via the process of solid-phase regrowth. (C) 2001 Elsevier S cience Ltd. All rights reserved.