Ellipsometric investigations of (100) GaSb surface under chemical etching and sulfide treatment

Authors
Papis, E Kudla, A Piotrowski, TT Golaszewska, K Kaminska, E Piotrowska, A
Citation
E. Papis et al., Ellipsometric investigations of (100) GaSb surface under chemical etching and sulfide treatment, MAT SC S PR, 4(1-3), 2001, pp. 293-295
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
293 - 295
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<293:EIO(GS>2.0.ZU;2-G
Abstract
Variable angle spectroscopic ellipsometry has been employed to study (1 0 0 ) GaSb surface under various chemical treatment providing information on th e thickness, refractive index and dielectric function of residual oxides an d intentionally formed sulfides. An evidence is given that etching and sulf ide pretreatment in 1 M Na2S developed in this work enables to greatly enha nce the quality of the GaSb surface and to reduce the thickness of residual s down to 0.8-1nm. On the other hand, electrochemical treatment in 21% (NH4 )(2)S has been proved to be an efficient method of passivation of GaSb surf ace. (C) 2001 Elsevier Science Ltd. All rights reserved.