Characterization of BaTiO3 thin films on p-Si

Polycrystalline BaTiO3 thin films grown on p-Si (1 0 0) substrates by RF sp uttering and subjected to a post-thermal annealing at 700 degreesC, were ch aracterized for potential applications as cladding insulators in AC thin-hi m electroluminescent devices. Building such a device requires the study of an insulator/semiconductor and an insulator/phosphor interface. The study o f the BaTiO3 surface in the present work provides information on the creati on of defects due to the deposition process. Rutherford backscattering spec troscopy and X-ray photoelectron spectroscopy were used to investigate the surface and bulk created defects. They showed the existence of Ba and Ti ox ides formed on the surface probably due to the post thermal annealing, Thes e oxides may be responsible for the creation of interface states between th e BaTiO3 film and the subsequent deposited ZnS films in order to build an A C thin-film electroluminescent device. (C) 2001 Elsevier Science Ltd. All r ights reserved.