High-field magnetization of RCo2Si2 (R = Gd, Tb)

Authors
Shigeoka, T Iwata, N Koiwai, S Uwatoko, Y Hane, S Goto, T
Citation
T. Shigeoka et al., High-field magnetization of RCo2Si2 (R = Gd, Tb), PHYSICA B, 294, 2001, pp. 258-261
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
294
Year of publication
2001
Pages
258 - 261
Database
ISI
SICI code
0921-4526(200101)294:<258:HMOR(=>2.0.ZU;2-E
Abstract
High-field magnetization and magnetic susceptibility have been measured on RCo2Si2 (R = Gd, Td) single crystals with the tetragonal ThCr2Si2-type of s tructure. Typical features for a simple antiferromagnetic structure with sm all and large magnetic anisotropy are observed on the Gd- and Tb-compounds, respectively; a linear magnetization curve with a small spin-flop transiti on in the Gd-compound and a two-step metamagnetic process in the Tb-compoun d are seen. (C) 2001 Elsevier Science B.V. All rights reserved.