Fermi surfaces of LaRhSi3 and CeRhSi3

CeRhSi3 has the large electronic specific-heat coefficient gamma =120mJ/mol K-2 and the high Kondo temperature T-K similar to 100 K, although its magn etic susceptibility follows the Curie-Weiss law and the specific heat indic ates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron natu re in CeRhSi3, we have grown single crystals of CeRhSi3 and of its referenc e material LaRhSi3 and measured the electrical resistivity, the magnetic su sceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the an gular dependence of the dHvA frequency in CeRhSi3 to that in LaRhSi3 indica tes that the 4f-electrons of CeRhSi3 are itinerant. (C) 2001 Elsevier Scien ce B.V. All rights reserved.