We have performed de Haas-van Alphen effect measurements on V3Si in both no
rmal and mixed states. The oscillations with many frequency components obse
rved in the normal state considerably differ from previously reported ones.
We discuss this discrepancy in terms of domain structures formed at the ma
rtensitic transition of V3Si. The field dependence of the oscillation ampli
tude is determined. (C) 2001 Elsevier Science B.V. All rights reserved.