Photoluminescence under high magnetic field and the magnetic susceptibility for bulk growth Yb doped InP

Citation
H. Suzuki et al., Photoluminescence under high magnetic field and the magnetic susceptibility for bulk growth Yb doped InP, PHYSICA B, 294, 2001, pp. 475-478
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
294
Year of publication
2001
Pages
475 - 478
Database
ISI
SICI code
0921-4526(200101)294:<475:PUHMFA>2.0.ZU;2-R
Abstract
For the bulk growth InP doped with Yb, we have studied the magnetic propert ies by measuring the photoluminescence under high magnetic field and the ma gnetic susceptibility. The magnetic field dependence of the photoluminescen ce reveals that the emitting Yb ions form one type luminescence center and the crystal field ground state is the doublet Gamma (7) for the ground stat e F-2(7/2) and the quarter Gamma (8) for the excited state F-2(5/2). The ma gnetic susceptibility shows typical crystal field behavior at low temperatu res and a Curie-Weiss law with Theta (P) ( approximate to 70 K)at higher te mperatures. This Theta (P) implies that the antiferromagnetic interaction w orks on the magnetic moment of Yb ion. (C) 2001 Elsevier Science B.V. All r ights reserved.