Shallow impurities in V-groove quantum wires - art. no. 113307

We calculate the binding energies for shallow impurities in V-groove GaAs/A lxGa1-xAs quantum wires using a variational technique. The carrier ground s tates are calculated by an effective potential method together with a suita ble coordinate transformation that allows the decoupling of the two-dimensi onal wave function. This method enables a detailed calculation of binding e nergies, providing an efficient tool for the study of impurity-related prop erties in V-groove wires. We Show that the lateral confinement of the V-gro ove potential localizes the impurity wave function very effectively in the central region of the quantum wire.