In 1985, Beeman, Tsu, and Thorpe established an almost linear relation betw
een the Raman transverse-optic (TO) peak width Gamma and the spread in mean
bond angle Delta theta in a-Si. This relation is often used to estimate th
e latter quantity in experiments. In the last decade, there has been signif
icant progress in the computer generation of sample networks of amorphous s
ilicon. Exploiting this progress, this paper presents a more accurate deter
mination of the relation between Gamma and Delta theta using 1000-atom conf
igurations. Also investigated and quantified are the relations between the
TO peak frequency and the ratio of the intensities of the transverse-acoust
ic (TA) and TO peaks, both as functions of Delta theta, As Delta theta decr
eases, the TA/TO intensity ratio decreases and the TO peak frequency increa
ses. These relations offer additional ways to obtain structural information
on a-Si from Raman measurements.