Temperature dependence of exciton linewidths in InSb quantum wells - art. no. 115321

Citation
N. Dai et al., Temperature dependence of exciton linewidths in InSb quantum wells - art. no. 115321, PHYS REV B, 6311(11), 2001, pp. 5321
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6311
Issue
11
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010315)6311:11<5321:TDOELI>2.0.ZU;2-M
Abstract
We studied the linewidths of excitons in InSb/Al0.09In0.91Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even t hough the exciton binding energy is only about 1 meV, the absorption is exc itonic up to room temperature, due to very weak LO-phonon-electron coupling . The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. We found that acoustic phon on scattering must be taken into account in fitting the experimental excito n linewidths.