Ss. Kim et al., Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source, PHYS PLASMA, 8(4), 2001, pp. 1384-1394
In high-density plasma etching processes for ultra-large-scale integrated (
ULSI) circuits, the uniformity of the plasma over a large area is of major
concern. Recently a resonant inductively coupled plasma source [S. S. Kim ,
Appl. Phys. Lett. 77, 492 (2000)] has been proposed for large-area plasma
processing, which achieves large-area plasma uniformity by properly tuning
its antenna with an external variable capacitor. In the present paper, the
plasma transport and poly-Si etching characteristics of this plasma source
have been numerically investigated using a self-consistent model for electr
on heating, plasma transport, and microscopic etching profiles. The numeric
al simulation results indicate that uniform poly-Si etching over 300 mm in
diameter can be easily achieved in this plasma source. (C) 2001 American In
stitute of Physics.