Current components analysis of MIS/IL solar cells for different fabrication parameters

A model has been developed to simulate the performance of MIS/IL silicon so lar cells taking into consideration the effect of cell surface parameters, namely, positive fixed oxide density, surface states density and mobile cha rge density on the current components. We consider a MIS/IL device on p-typ e semiconductor substrate. A complete set of equations is used which includ e the diffusion current (J(diff)), the hole and the electron tunneling curr ents through the oxide layer (J(ht), J(et)), the surface states current com ponents (J(hs), J(es) and J(ss)), the generation-recombination current in t he transition region (J(RG)), and the photocurrent generated in the bulk in the transition region (J(LN)). The results show that the photogenerated cu rrent, surface state current and the tunneling current have the dominant ef fects on the cell performance. (C) 2001 Published by Elsevier Science Ltd.