The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1))

Authors
Imenkov, AN Kolchanova, NM Yakovlev, YP Kubat, P Civis, S
Citation
An. Imenkov et al., The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1)), REV SCI INS, 72(4), 2001, pp. 1988-1992
Citations number
24
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
72
Issue
4
Year of publication
2001
Pages
1988 - 1992
Database
ISI
SICI code
0034-6748(200104)72:4<1988:TSLOTS>2.0.ZU;2-3
Abstract
A method was used to measure the width of emission lines of a type of semic onductor laser with composition InAsSb/InAsSbP. This type of laser was manu factured specially for absorption high-resolution spectroscopy of gases abs orbing in the 2800-3100 cm(-1) region. Parameters used for calculation of s pectral emission linewidths were obtained using selected rotation-vibration lines of the gaseous molecules N2O, CH3Cl, and OCS. The estimated spectral emission linewidths varied in the range 10-30 MHz in dependence of the cur rent passing and the type of laser. (C) 2001 American Institute of Physics.