Cc. Lee et al., An apparatus for the measurement of internal stress and thermal expansion coefficient of metal oxide films, REV SCI INS, 72(4), 2001, pp. 2128-2133
A measuring apparatus based on a phase shifting interferometry technique to
determine the mechanical properties of metal oxide films was presented. Th
in films were prepared by ion-beam sputter deposition at low substrate temp
erature. Quantitative determination of the mechanical properties such as th
e internal stress, biaxial elastic modulus, and thermal expansion coefficie
nt of metal oxide films were investigated. A phase shifting Twyman-Green in
terferometer with the phase reduction algorithm was setup to measure the te
mperature-dependent stress in thin films. Two types of circular glass plate
s, with known Young's moduli, Poisson's ratios, and thermal expansion coeff
icients, were used as coating substrate. The temperature-dependent stress b
ehavior of the metal oxide films was obtained by heating samples in the ran
ge from room temperature to 70 degreesC. The stresses of thin films deposit
ed on two different substrates were plotted against the stress measurement
temperature, showing a linear dependence. Four oxide films were reported fo
r their film stresses and thermal expansion coefficients. (C) 2001 American
Institute of Physics.