Conduction properties of CaTi1-xMxO3-alpha (M = Ga,Sc) at elevated temperatures

Citation
S. Hashimoto et al., Conduction properties of CaTi1-xMxO3-alpha (M = Ga,Sc) at elevated temperatures, SOL ST ION, 139(3-4), 2001, pp. 179-187
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
139
Issue
3-4
Year of publication
2001
Pages
179 - 187
Database
ISI
SICI code
0167-2738(200102)139:3-4<179:CPOC(=>2.0.ZU;2-4
Abstract
Conduction properties of CaTi1-xMxO3-alpha(M = Ga,Sc) at high temperature w ere investigated using electrochemical methods. The ionic conductivity of C aTi1-xScxO3-alpha showed the highest value among those for CaTiO3-based oxi des ever reported and was comparable to that of 8YSZ in the range of 1073-1 273 K. The conductivity of CaTi1-xGaxO3-alpha was on the same level as that of CaTi1-xAllambdaO3-alpha. The mobile ions, in the specimens were mainly oxide ions. Hole conduction was included in the total conduction under the ordinary atmosphere and electronic conduction appeared in the region of low oxygen partial pressure. In addition, under intermediate range of oxygen p artial pressure, the ionic conduction domain in which the conductivity was independent of oxygen partial pressure was also observed. Especially, Sc-do ped specimens showed not only higher conductivity but also wider ionic doma in and higher ion transference number than those for other CaTiO3-based sol id solutions under fuel cell condition. (C) 2001 Elsevier Science B.V. All rights reserved.