Crystal orientation effects on sputtering and depth resolution in GDOES

Citation
L. Chen et al., Crystal orientation effects on sputtering and depth resolution in GDOES, SURF INT AN, 31(3), 2001, pp. 206-211
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE AND INTERFACE ANALYSIS
ISSN journal
01422421 → ACNP
Volume
31
Issue
3
Year of publication
2001
Pages
206 - 211
Database
ISI
SICI code
0142-2421(200103)31:3<206:COEOSA>2.0.ZU;2-V
Abstract
We investigate crystal orientation effects in the sputtering rate of pure i ron in glow discharge optical emission spectrometry (GDOES). Scanning elect ron microscopy (SEM), optical profilometry and electron backscattered diffr action (EBSD) are used to investigate details of the surface structure and to correlate the depth of burn-and hence sputtering rate-with the crystallo graphy of the sample. The microstructure of the sputtered crater bottom is classified into three types: 'rough', 'concaved' and 'smooth'. It was found that there is a correlation between the crystal orientation normal to the surface, the resulting surface texture and the sputtering rate:'rough' text ure results from a crystallographic pole of [111] normal to the surface; 'c oncaved' texture is close to [001]; and 'smooth' tends to be between [111] and [001]. It was found that the average sputtered depth of the micro-areas close to [001] pole is deeper than that of those close to [111]. Implicati ons for the depth resolution in GDOES are discussed. Copyright (C) 2001 Joh n Wiley & Sons, Ltd.