High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

The deposition of stoichiometric aluminum oxide films by off-plane double b end filtered cathodic vacuum are (FCVA) is first reported. A novel method f or introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCV A technique. Stoichiometric aluminum oxide films were deposited successfull y under varying are current and oxygen partial pressure. In general, a high er partial pressure is needed at higher are current in order to maintain st oichiometric composition. The utilization efficiency of the aluminum target was also studied. (C) 2001 Elsevier Science B.V. All rights reserved.