The growth of aligned AlN-nanocrystals in aluminium after nitrogen-ion implantation at 330 K

Ion implantation of N-2(+) at 100 keV into metallic Al has been used to nuc leate and grow nanocrystals of insulating AlN within the Al matrix. The AlN -nanocrystals are well aligned to the Al host lattice. With increasing N+ d ose, the formation of a homogeneous layer of AlN is observed. The diffusion and growth process proceeds at temperatures below 70 degreesC (essentially at ambient temperature) and is enabled by a strain-enhanced diffusion of N into Al. The AlN-nanocrystals form rapidly within metallic Al, but not wit hin the more stable Al2O3 phase. (C) 2001 Elsevier Science B.V. All rights reserved.