Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

Chromium layers 800 Angstrom thick are deposited by electron gun evaporatio n on: respectively, non-implanted, 5 x 10(14) and 5 x 10(15) at./cm(2) P+-i mplanted Si(111) substrates. The redistribution of phosphorus and the influ ence on chromium silicide growth are analyzed by secondary ion mass spectro scopy (SIMS) and Rutherford backscattering spectroscopy (RBS) after anneali ng between 450 degrees and 550 degreesC. It is shown that chromium silicide formation is retarded or inhibited by the presence of phosphorus. The impl ant diffuses out of the CrSi2 surface layer in both implantation cases, but also accumulates at the CrSi2/Si interface in the case of the higher dose. (C) 2001 Elsevier Science B.V. All rights reserved.