High field electron trap generation and oxide breakdown in thin silicon dioxide layers

Authors
Aassime, A
Citation
A. Aassime, High field electron trap generation and oxide breakdown in thin silicon dioxide layers, THIN SOL FI, 385(1-2), 2001, pp. 252-254
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
385
Issue
1-2
Year of publication
2001
Pages
252 - 254
Database
ISI
SICI code
0040-6090(20010402)385:1-2<252:HFETGA>2.0.ZU;2-Q
Abstract
Electrical breakdown of thin silicon oxide layers subject to high electric field during constant current injection is studied, The correlation between charge-to-breakdown and electron trap generated inside of the oxides durin g electron injection is verified. This correlation is described in terms of oxide thickness and field dependencies observed during thin oxide breakdow n. (C) 2001 Elsevier Science B.V. All rights reserved.