Solution processed CdS thin film transistors

Thin film field-effect transistors based on solution processed CdS have bee n prepared. Mobilities in the range of 5 to 9 cm(2)/Vs and on/off-current r atios exceeding 10(6) are demonstrated. The device performance can be signi ficantly enhanced by annealing in nitrogen resulting in mobilities as high as 45 cm(2)/Vs. The increase in mobility is ascribed to a reduction of trap ping states at the grain boundaries of the CdS thin film, presumably desorp tion of oxygen or water. Solution processing (chemical bath deposition) of inorganic semiconductors might offer a path for low-cost, large-area microe lectronic devices. (C) 2001 Elsevier Science B.V. All rights reserved.