Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates

The sol-gel derived epitaxial growth of ferroelectric Pb(Zr,Ti)O-3 (PZT) fi lms on epitaxial CeO3(111)/Si(111) substrates has been demonstrated. We fou nd that the growth of the PZT(111) film on the substrate is dominated by th e cube-on-cube type relationship, where the areal mismatch between the PZT( 111) and CeO2(lll) plane was as small as 0.72%. The CeO2(lll) layer was eff ective in suppressing the interdiffusion between the PZT film and Si. Typic al memory window of the Al/PZT(111)/CeO2(111)/Si(lll) structure was 1.54 V, which was determined by the polarization reversal of the PZT(111) layer. T he leakage current density and the resistivity measured at 5 V were 2.08 X 10(-7) A/cm(2) and 1.41 X 10(12) Ohm cm, respectively. Therefore, the epita xial PZT(111)/CeO2(lll)/Si(lll) structure suggests a great potential for ap plication to a metal-ferroelectric-insulator-semiconductor (MFIS) memory de vice. (C) 2001 Elsevier Science B.V. All rights reserved.