The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering

Authors
Liu, FZ Zhu, MF Liu, T Li, BC
Citation
Fz. Liu et al., The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering, ACT PHY C E, 50(3), 2001, pp. 532-535
Citations number
11
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
50
Issue
3
Year of publication
2001
Pages
532 - 535
Database
ISI
SICI code
1000-3290(200103)50:3<532:TTFETE>2.0.ZU;2-U
Abstract
Eu ions doped SiO2 thin films, SiO2( Eu), were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films. Th e Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra of SiO2( Eu) films show a doublet absorption peak structure with energy difference o f 7 eV, which indicates the conversion of Eu3+ to Eu2+ at high annealing te mperature in N-2. The strong blue luminescence of SiO2(Eu) films prepared b y ions implantation after films annealed above 1100 degreesC confirms the a bove argument.