Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium

Authors
Kuhler, T Jutzi, P Stammler, A Stammler, HG
Citation
T. Kuhler et al., Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium, CHEM COMMUN, (6), 2001, pp. 539-540
Citations number
13
Categorie Soggetti
Chemistry
Journal title
CHEMICAL COMMUNICATIONS
ISSN journal
13597345 → ACNP
Issue
6
Year of publication
2001
Pages
539 - 540
Database
ISI
SICI code
1359-7345(2001):6<539:EFOIBR>2.0.ZU;2-F
Abstract
The reaction of decamethylsilicocene 1 with trimethylindium yields the disi lyl indium compound [Cp*Si-2(Me)](2)InMe (2) in nearly quantitative yield; 2 is characterised by H-1, C-13 and Si-29 NMR and microanalytical data and by X-ray crystallography.