PLANAR LATERALLY OXIDIZED VERTICAL-CAVITY LASERS FOR LOW-THRESHOLD HIGH-DENSITY TOP-SURFACE-EMITTING ARRAYS

We introduce a novel device architecture that enables the fabrication of low threshold high density vertical-cavity surface-emitting laser ( VCSEL) arrays. Our structure relies on a group of small via holes to a ccess a buried AlGaAs layer for lateral oxidation. In contrast to the conventional method of exposing mesa sidewalls through etched pillars, this technique provides our VCSEL's with the benefits of oxide confin ement without sacrificing wafer planarity. Maintaining wafer planarity is essential for the easy fabrication and contacting of densely packe d devices. The devices operate at 827 nm, with a minimum threshold cur rent of 200 mu A, and a maximum output power of 3.15 mW.