HIGH-POWER (GREATER-THAN-0.5-W CW) DIODE-PUMPED VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR-LASERS WITH CIRCULAR TEM00 BEAMS

Authors
KUZNETSOV M HAKIMI F SPRAGUE R MOORADIAN A
Citation
M. Kuznetsov et al., HIGH-POWER (GREATER-THAN-0.5-W CW) DIODE-PUMPED VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR-LASERS WITH CIRCULAR TEM00 BEAMS, IEEE photonics technology letters, 9(8), 1997, pp. 1063-1065
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
8
Year of publication
1997
Pages
1063 - 1065
Database
ISI
SICI code
1041-1135(1997)9:8<1063:H(CDV>2.0.ZU;2-F
Abstract
We report demonstration of a new high-power semiconductor laser techno logy, the optically pumped semiconductor (OPS) vertical-external-cavit y surface-emitting laser (VECSEL), Using diode laser pump, an OPS-VECS EL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near lambda similar to 1004 nm with record output power of 0.69 W in a TEM11 mode, 0.52 W in a TEM00 mode, and 0.37 W coupled to a single-mode fiber. It is feasibl e to produce greater than 1 W of power in a diffraction-limited circul ar beam from an efficient, compact, manufacturable and reliable OPS-VE CSEL laser.