SILICON-ON-INSULATOR ASYMMETRIC OPTICAL SWITCH BASED ON TOTAL INTERNAL-REFLECTION

Based on large cross-section single-mode rib waveguide condition, tota l internal reflection (TIR) and plasma dispersion effect, a silicon-on -insulator (SOI) asymmetric optical waveguide switch with transverse i njection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and hac k-polishing The device performance is measured at the wavelength of 1. 3 mu m. It shows that the extinction ratio and insertion loss are less than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA . Response time is 110 ns.