Cz. Zhao et al., SILICON-ON-INSULATOR ASYMMETRIC OPTICAL SWITCH BASED ON TOTAL INTERNAL-REFLECTION, IEEE photonics technology letters, 9(8), 1997, pp. 1113-1115
Based on large cross-section single-mode rib waveguide condition, tota
l internal reflection (TIR) and plasma dispersion effect, a silicon-on
-insulator (SOI) asymmetric optical waveguide switch with transverse i
njection structure has been proposed and fabricated, in which the SOI
technique utilizes silicon and silicon dioxide thermal bonding and hac
k-polishing The device performance is measured at the wavelength of 1.
3 mu m. It shows that the extinction ratio and insertion loss are less
than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA
. Response time is 110 ns.