Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

Authors
Van Caenegem, T Van Thourhout, D Galarza, M Verstuyft, S Moerman, I Van Daele, P Baets, R Demeester, P Herben, CGP Leijtens, XJM Smit, MK
Citation
T. Van Caenegem et al., Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy, ELECTR LETT, 37(5), 2001, pp. 296-298
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
5
Year of publication
2001
Pages
296 - 298
Database
ISI
SICI code
0013-5194(20010301)37:5<296:MIMLBS>2.0.ZU;2-C
Abstract
A multi-wavelength laser (MWL) is fabricated by means of selective area gro wth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (d e-)multiplexer and, to the authors' knowledge, is the first device of this kind realised with only two growth steps making use of SAG MOVPE.