Au/AuBe/Cr contact to p-ZnTe

Authors
Chang, SJ Chen, WR Su, YK Chen, JF Lan, WH Chiang, CI Lin, WJ Cherng, YT Liu, CH
Citation
Sj. Chang et al., Au/AuBe/Cr contact to p-ZnTe, ELECTR LETT, 37(5), 2001, pp. 321-322
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
5
Year of publication
2001
Pages
321 - 322
Database
ISI
SICI code
0013-5194(20010301)37:5<321:ACTP>2.0.ZU;2-W
Abstract
Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-Z nTe. It a as found that with a proper choice of Cr thickness, a low specifi c contact resistance of 2.0 x 10 (6)Omega cm(2) can be achieved for Au/AuBe /Cr on p-ZnTe. It was also Found that Zn outdiffusion will significantly de grade the electrical properties of the Au/AuBe contact on p-ZnTe when annea ling temperature is above 300 degreesC. Conversely. Au/AuBe/Cr contact is m ore thermally reliable. Such a property makes Au/AuBe/Cr attractive in devi ce application.