APPLICATIONS OF A NEW THEORY ON THE X-RAY-ENERGY RESPONSES OF SEMICONDUCTOR-DETECTORS TO PLASMA X-RAY-DIAGNOSTICS

Our recently proposed theory on X-ray energy responses of semiconducto r detectors is based on the physics principle of the three-dimensional diffusion of X-ray-produced charges in a semiconductor field-free sub strate region. In this paper, this diffusion process is experimentally verified using a spatially distributed charge profile produced by an X-ray beam in a multi-channel semiconductor detector. Actual X-ray pro file data are distorted because of the effect of the diffusion. Using this theoretical principle, a new X-ray analysis method for obtaining plasma electron temperature profiles (that have no dependence on plasm a densities) is proposed. (C) 1997 Elsevier Science S.A.