Ferroelectric thin films for optical applications

Citation
C. Buchal et M. Siegert, Ferroelectric thin films for optical applications, INTEGR FERR, 35(1-4), 2001, pp. 1731-1740
Citations number
45
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
35
Issue
1-4
Year of publication
2001
Pages
1731 - 1740
Database
ISI
SICI code
1058-4587(2001)35:1-4<1731:FTFFOA>2.0.ZU;2-A
Abstract
Presently the installation of optical fibers for high bandwidth communicati on services experiences an explosive growth on a world wide scale. As a con sequence, a growing demand for more complex integrated optical devices is f orseeable. At present, the technology for electrooptic integrated devices a nd components has been mostly satisfied by bulk LiNbO3, which is by far the most important optical ferroelectric. We will review the state of the art of "near-surface-modified"-ferroelectric devices, which have been patterned on bulk substrates and their potential counterparts to be fabricated compl etely in thin film technology on different substrates. Special emphasis wil l be laid upon theepitaxy of LiNbO3, BaTiO3 and (Pb, La) (Zr, Ti)O-3.