A new dielectric bolometer mode of detector pixel for uncooled infrared image sensor with ferroelectric BST thin film prepared by metal-organic decomposition

A Ba1-xSrxTiO3(Bi/Sr=75/25) ferroelectric thin film for detector pixel of u ncooled infrared (IR) image sensor was prepared by metalorganic decompositi on (MOD) with final annealing. at 700 to 800 degreesC. The films electrical characteristics such as temperature dependence of capacitance and insulati on are very good from the viewpoints of spatial uniformity and stability ag ainst thermal cycling. The MOD film was applied to our proposed dielectric bolometer (DB) mode of IR detector that has merits in 1) room temperature o peration, 2) chopperless, 3) low power dissipation, and 4) high sensitivity . Finally, the DB-mode operation in the detector pixel was confirmed on the integrated device structure, and the resultant voltage sensitivity (R-v) a nd specific detectivity (D*) were observed to be 0.4 kV/W and 9.8x10(7) cmH z(1/2)/W with noise voltage (V-n) of 100 nV, respectively, where the detect or size was 200 mum(2). Excellent output linearity against IR power down to 0.5 mW/cm(2) and an IR image from IR source with average power of 6 mW/cm( 2). were also obtained.