Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD

Epitaxial Pb(Mg1/3Nb2/3)O-3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O-3)-x(PbTiO3) (P MN-PT) thin films have been deposited by metalorganic chemical vapor deposi tion at 700 - 780 degreesC on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Ro om temperature values of 900 and 1.5%, were measured for the zero-bias perm ittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 de pending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hyster esis with P(r)approximate to 18 muC/cm(2) was obtained. Initial piezorespon se results are discussed.