(Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films

Sputtered Pb(ZrxTi1-x)O-3 thin films with various (Zr/Ti) compositions rang ing from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7-0.8 mum thickness, wer e deposited on Si/SiO2/Ti/Pt by sputtering followed by conventional anneali ng. The sputtering conditions were the same for all the compositions. There were no apparent differences in crystallographic orientation as a function of Zr/Ti and the films a-lattice constant evolution is not exactly identic al to the one of bulk ceramics. The permittivity increases when the Zr conc entration increases and decreases just after the morphotropic composition i .e. Zr-rich films. The ferroelectric properties are very sensitive to the Z r/Ti ratio. For example, the coercive field increases when the Ti concentra tion in the increases.