Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD

The ferroelectric YMnO3 and Y2O3 thin films for the Metal/Ferroelectric/ins ulator/Semiconductor field effect transistors (MFISFET) structure were depo sited in-situ using metalorganic chemical vapor deposition (MOCVD). The C-V characteristics had a hysteresis curve with a clockwise rotation, which in dicates ferroelectric polarization switching behavior. When the gate voltag e sweeps from +5 to -5 V, the memory window of the Pt/YMnO3/Y2O3/Si gate ca pacitor annealed at 850 degreesC in 75 mTorr(oxygen pressure) was about 1.4 V. The typical leakage current density of the films annealed at 850 degrees C in 75 mTorr(oxygen pressure) was about 10(-7)A/cm(2) at applied voltage o f 5 V.