Characteristics of Pt/SBT/ZrO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor applications

Authors
Park, JD Oh, TS
Citation
Jd. Park et Ts. Oh, Characteristics of Pt/SBT/ZrO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor applications, INTEGR FERR, 34(1-4), 2001, pp. 1561-1570
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
34
Issue
1-4
Year of publication
2001
Pages
1561 - 1570
Database
ISI
SICI code
1058-4587(2001)34:1-4<1561:COPSFM>2.0.ZU;2-M
Abstract
Pt/SBT/ZrO2/Si structure was proposed for metal ferroelectric insulator sem iconductor field effect transistor (MFIS-FET) applications. SrBi2.4Ta2O9(SB T) thin film was prepared using liquid source misted chemical deposition on Si(100) substrate with ZrO2 buffer layer deposited by DC reactive sputteri ng. Capacitance of the Pt/SBT/ZrO2/Si structure in the accumulation region became larger with decreasing oxygen content in the sputtering gas for ZrO2 deposition and decreasing thickness of ZrO2 buffer layer. The Pt/SBT/ZrO2/ Si structure exhibited C-V hysteresis loop with the memory window of 0.72 s imilar to0.97 V at +/-5 V and could be applicable for MFIS-FET applications .