MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices

Authors
Baumann, PK Kaufman, DY Im, J Auciello, O Streiffer, SK Erck, RA Guimarra, J
Citation
Pk. Baumann et al., MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices, INTEGR FERR, 34(1-4), 2001, pp. 1695-1702
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
34
Issue
1-4
Year of publication
2001
Pages
1695 - 1702
Database
ISI
SICI code
1058-4587(2001)34:1-4<1695:M((TFF>2.0.ZU;2-6
Abstract
We have investigated the structural and electrical characteristics of (BaxS r1-x)Ti1+yO3+z (BST) thin films synthesized at 650 degreesC on Pt/SiO2/Si s ubstrates using a large area, vertical metalorganic chemical vapor depositi on (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/ Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spec troscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substant ial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700 degreesC. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized proce ssing conditions.