Relationship between PB content, crystallographic texture and ferroelectric properties of PLZT thin films for FRAM (R) applications

In order to have better control of ferroelectric properties and fast PLZT t hin film quality control monitoring during FRAM processing, a correlation b etween ferroelectric performance, Ph content and crystallographic texture n eeds to be established for RF magnetron sputtered PLZT thin films. The ferr oelectric performance of 200 nm PLZT thin films that contain different leve ls of ph excess and different volume fractions of {100} textured materials were investigated. It was found that a higher Pb excess in the as-sputtered PLZT film leads to a higher volume fraction of {100} textured crystallites after annealing. Highly {111} textured PZT thin films show a relatively hi gh Q(SW) (approximate to 2Pr), however the fatigue and the aging performanc e is not optimized. The optimized range for the volume fraction of {100} te xtured material was identified. PLZT thin films, of which the {100} volume fraction is in the optimized range, exhibit improved fatigue and aging perf ormance, better suited for FRAM application.