Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application

In this work decided measuring techniques and procedures based on conventio nal hysteresis measurements and fast pulse characterization are exploited t o emphasize the meaning of the ferroelectric relaxation for the fast read a nd write access of the: memory cell in the time region of several nanosecon ds. The dependence of the transient polarization reversal on the measuring frequency, and the voltage pulse pattern is presented for PZT thin film mat erial. In the light of the extracted data the theoretical models of classic al ferroelectric phase transition compared to dissipative charge redistribu tion is discussed.