Fully MOCVD obtained epitaxial ferroelectric capacitors

Thin films of ferroelectrics PbZrxTi1-xO3 and metallic oxides La0.5Sr0.5CoO 3, LaNiO3, [La0.5Sr0.5CoO3](1-x)[LaNiO3](x) were deposited by single source MOCVD using M(thd)(n) compounds. After the deposition conditions of indivi dual layers were optimized, the epitaxial capacitors were prepared on MgO s ingle crystal substrates. The series of capacitors with common bottom elect rode and separate top electrode plates (200 to 200 mum(2)) were formed by s tandard photolithography and wet etching. Remnant polarization of obtained capacitors reached 5-10 muC/cm(2) and showed no fatigue behaviour after mor e then 10(13) switching. Crucial effect of morphological and microstructura l defects of capacitor layers on reproducibility of polarization was noted.