Citation
Vy. Shur et al., Kinetics of fatigue effect, INTEGR FERR, 33(1-4), 2001, pp. 117-132
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587
→ ACNP
Volume
33
Issue
1-4
Year of publication
2001
Pages
117 - 132
Database
ISI
SICI code
1058-4587(2001)33:1-4<117:KOFE>2.0.ZU;2-U
Abstract
We propose and confirm by computer simulation that the kinetics of fatigue
phenomenon during ac switching is due to evolution of spatial distribution
of bias field. Arising and growth of frozen domains as a result of self-org
anized domain kinetics is studied. The simulated fatigue behavior is in acc
ord with experimental data obtained during cyclic switching using triangula
r and rectangular field pulses in PZT films and PZN-PT single crystals.