Polarization switching of SrBi2Ta2O9 thin films prepared by MOD method

The switching properties of SrBi2Ta2O9 (SBT) thin films produced by metalor ganic decomposition (MOD) technology were measured in the film thickness ra nge from 220 to 660 nm with different top electrode areas from 10(-5) to 10 (-3) cm(2). The experimental results indicate that the switching properties of the thin film capacitors are significantly influenced by the external e lectric field. The switching time is also strongly dependent on the size of the top electrode. A power law can be obtained to describe the relationshi p of t(s) and the area of the top electrode. The thermal annealing of the c apacitors at different temperatures for various times in oxygen ambient is studied and the annealing effects on switching properties are discussed. Th e external load influence on switching time is considered.