Effects of interface state on electrcal properties of SBT thin films

The high leakage current density was measured immediately after the top ele ctrode annealing and leakage current density was decreased with increasing time. This may be attributed to the interaction of metallic Bi at the inter face (or boundary) region with oxygen atoms. The top electrode annealing wa s also carried out in various conditions in order to investigate the correl ation of leakage current characteristics in SrBi2Ta2O9 thin films with Bi-P t compounds at the interface region. From XRD results after annealing of Pt /Bi-oxide structure, it can be concluded that the Bi-Pt oxides were formed at the interface region after annealing in oxygen ambient, whereas the Bi-P t alloys partially including oxygen atoms were formed after annealing in ar gon ambient.