Hq. Ling et al., Characterization of SrBi2Ta2O9 films prepared by metalorganic decomposition using rapid thermal annealing, INTEGR FERR, 33(1-4), 2001, pp. 253-259
The SrBi2Ta2O9 (SBT) thin films were prepared on Pt/TiO2/SiO2/Si substrates
by metalorganic decomposition method. The films were annealed layer by lu)
rr at 650-800 degreesC for 3minutes in oxygen using rapid thermal annealin
g. The structure, morphology and electrical properties of as-deposited film
s were characterized using X-ray diffraction, atomic force microscope. Auge
r electron spectroscopy and some electrical measurement. The films showed s
maller grains. higher density. less interfacial diffusion and smaller remna
nt polarization than those annealed in conventional tube furnace. The remna
nt polarization and coercive field at applied voltage of 3V were 8.7 muC/cm
(2) and 13.4kV/cm. respectively. fur the 440nm-thick films annealed at 750
degreesC. The coercive field was much lower than those reported previously.
This is advantageous to low voltage applications in nonvolatile memory. Th
e films also exhibited no fatigue after 10(10) cycles switching and no loss
after 10(5)s retention time.